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IRFR3504Z

Part Number	IRFR3504Z
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 13, 2020
Detailed Description	isc N-Channel MOSFET Transistor IRFR3504Z, IIRFR3504Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9mΩ ·Enhan...
Datasheet	IRFR3504Z PDF File

Overview

isc N-Channel MOSFET Transistor IRFR3504Z, IIRFR3504Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 77 IDM Drain Current-Single Pulsed 310 PD Total Dissipation @TC=25℃ 90 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-...

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