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IRFR3504Z

International Rectifier
Part Number IRFR3504Z
Manufacturer International Rectifier
Description AUTOMOTIVE MOSFET
Published Sep 27, 2005
Detailed Description PD - 94753 AUTOMOTIVE MOSFET IRFR3504Z IRFU3504Z HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technolo...
Datasheet PDF File IRFR3504Z PDF File

IRFR3504Z
IRFR3504Z

Overview
PD - 94753 AUTOMOTIVE MOSFET IRFR3504Z IRFU3504Z HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 9.
0mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D-Pak IRFR3504Z I-Pak IRFU3504Z Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, ...


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