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IRFR5410

INCHANGE
Part Number IRFR5410
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 13, 2020
Detailed Description isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤205mΩ ·Enhanc...
Datasheet PDF File IRFR5410 PDF File

IRFR5410
IRFR5410

Overview
isc P-Channel MOSFET Transistor IRFR5410,IIRFR5410 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤205mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175°C operating junction temperature ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -13 IDM Drain Current-Single Pulsed -52 PD Total Dissipation @TC=25℃ 66 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.
9 110 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain...


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