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SPD08N50C3

INCHANGE
Part Number SPD08N50C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 14, 2020
Detailed Description isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·En...
Datasheet PDF File SPD08N50C3 PDF File

SPD08N50C3
SPD08N50C3

Overview
isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.
6 IDM Drain Current-Single Pulsed 22.
8 PD Total Dissipation @TC=25℃ 83 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.
5 75 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPD08N50C3,ISPD08N50C3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION...


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