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SPD08N50C3

Infineon Technologies
Part Number SPD08N50C3
Manufacturer Infineon Technologies
Description Power Transistor
Published Jun 7, 2005
Detailed Description SPD08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in T...
Datasheet PDF File SPD08N50C3 PDF File

SPD08N50C3
SPD08N50C3

Overview
SPD08N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.
6 Ω ID 7.
6 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance , available in Halogen free mold compounda) • Fully qualified according to JEDEC for Industrial Applications Type SPD08N50C3 Package PG-TO252 Ordering Code Q67040-S4569 Marking 08N50C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.
5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax1) ID=7.
6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) ID p...


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