DatasheetsPDF.com

SPP02N60C3

INCHANGE
Part Number SPP02N60C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 14, 2020
Detailed Description isc N-Channel MOSFET Transistor SPP02N60C3，ISPP02N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3Ω ·Enha...
Datasheet PDF File SPP02N60C3 PDF File

SPP02N60C3
SPP02N60C3

Overview
isc N-Channel MOSFET Transistor SPP02N60C3，ISPP02N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·Ultra low effective capacitance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.
8 IDM Drain Current-Single Pulsed 5.
4 PD Total Dissipation @TC=25℃ 25 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 5 62 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPP02N60C3，ISPP02N60C3 ELECTRICAL CHARACTERISTICS TC=25℃ unless ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)