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SPP02N60S5

Infineon Technologies
Part Number SPP02N60S5
Manufacturer Infineon Technologies
Description Power Transistor
Published Oct 18, 2007
Detailed Description Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalan...
Datasheet PDF File SPP02N60S5 PDF File

SPP02N60S5
SPP02N60S5

Overview
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP02N60S5 VDS RDS(on) ID 600 V 3 Ω 1.
8 A PG-TO220 2 P-TO220-3-1 23 1 Type SPP02N60S5 Package PG-TO220 Ordering Code Q67040-S4181 Marking 02N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 1.
35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 1.
8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature IAR VGS VGS Ptot Tj , Tstg Value Unit A 1.
8 1.
1 3.
2 50 mJ 0.
07 1.
8 A ±20 V ±30 25 W -55.
.
.
+150 °C Rev.
2.
6 Page 1 2007-08-30 SPP02N60S5 Maximum Rati...


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