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2SK3633

INCHANGE
Part Number 2SK3633
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 19, 2020
Detailed Description iscN-Channel MOSFET Transistor 2SK3633 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (MAX) ·Enhancement mo...
Datasheet PDF File 2SK3633 PDF File

2SK3633
2SK3633

Overview
iscN-Channel MOSFET Transistor 2SK3633 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.
7Ω (MAX) ·Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pulsed 21 A PD Total Dissipation @TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.
833 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0...


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