DatasheetsPDF.com

BFR92A

Part Number	BFR92A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Oct 22, 2020
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor BFR92A DESCRIPTION ·Low Noise and High Gain NF = 1.3 dB TYP. @VCE...
Datasheet	BFR92A PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor BFR92A DESCRIPTION ·Low Noise and High Gain NF = 1.
3 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.
0 GHz ·High Power Gain ︱S21e︱2 = 11.
5 dB TYP.
@VCE = 10 V, IC = 20 mA, f = 1.
0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.
5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 100 mA 0.
2 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFR92A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter ...

Similar Datasheet

BFR90 Silicon NPN Planar RF Transistor - Vishay Telefunken
BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi Corporation
BFR90 HIGH FREQUENCY TRANSISTOR - Motorola
BFR90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Advanced Power Technology
BFR90A Silicon NPN Planar RF Transistor - Vishay
BFR90A Silicon NPN Planar RF Transistor - TEMIC Semiconductors
BFR90G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Advanced Power Technology
BFR91 Silicon NPN Planar RF Transistor - Vishay Telefunken
BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi Corporation
BFR91 HIGH FREQUENCY TRANSISTOR - Motorola

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)