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BFU580Q

INCHANGE
Part Number BFU580Q
Manufacturer INCHANGE
Description NPN Transistor
Published Oct 22, 2020
Detailed Description isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure fT = 8.5GHz TYP. @IC= 30mA ; VCE= 8V; f= 900MHz ·High Gain ...
Datasheet PDF File BFU580Q PDF File

BFU580Q
BFU580Q

Overview
isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure fT = 8.
5GHz TYP.
@IC= 30mA ; VCE= 8V; f= 900MHz ·High Gain ︱S21︱2 =13dB TYP.
@IC= 30mA ; VCE= 8V; f= 900MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range BFU580Q VALUE 25 15 2.
5 60 1 -40~150 -65~150 UNIT V V V mA W ℃ ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFU580Q ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V ICBO Collect...


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