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BFU580Q

NXP
Part Number BFU580Q
Manufacturer NXP
Description NPN wideband silicon RF transistor
Published Mar 23, 2016
Detailed Description 627 BFU580Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 Ge...
Datasheet PDF File BFU580Q PDF File

BFU580Q
BFU580Q

Overview
627 BFU580Q NPN wideband silicon RF transistor Rev.
1 — 28 April 2014 Product data sheet 1.
Product profile 1.
1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package.
The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.
2 Features and benefits  Low noise, high linearity, high breakdown RF transistor  AEC-Q101 qualified  Minimum noise figure (NFmin) = 0.
75 dB at 900 MHz  Maximum stable gain 14 dB at 900 MHz  11 GHz fT silicon technology 1.
3 Applications  Applications requiring high supply voltages and high breakdown voltages  Broadband amplifiers up to 2 GHz  Low noise, high linearity amplifiers for ISM applications  Automotive applications (e.
g.
, antenna amplifiers) 1.
4 Quick reference data Table 1.
Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open em...


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