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BU506A

INCHANGE
Part Number BU506A
Manufacturer INCHANGE
Description NPN Transistor
Published Oct 22, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for rob...
Datasheet PDF File BU506A PDF File

BU506A
BU506A

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1350 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
56 ℃/W BU506A isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU506A ELECTRICAL CHAR...


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