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IPA057N08N3

INCHANGE
Part Number IPA057N08N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 28, 2020
Detailed Description isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 5.7mΩ (ma...
Datasheet PDF File IPA057N08N3 PDF File

IPA057N08N3
IPA057N08N3

Overview
isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 5.
7mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 240 PD Total Dissipation @TC=25℃ 39 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.
8 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MI...


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