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IPA057N08N3G

Infineon Technologies
Part Number IPA057N08N3G
Manufacturer Infineon Technologies
Description MOSFET
Published Mar 27, 2011
Detailed Description MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,80V OptiMOS™3Power-Transistor IPA05...
Datasheet PDF File IPA057N08N3G PDF File

IPA057N08N3G
IPA057N08N3G

Overview
MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,80V OptiMOS™3Power-Transistor IPA057N08N3G DataSheet Rev.
2.
2 Final PowerManagement&Multimarket OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 • Fully isolated package (2500 VAC; 1 minute) Type IPA057N08N3 G IPA057N08N3 G Product Summary VDS RDS(on),max ID 80 V 5.
7 mW 60 A Package Marking PG-TO220-FP 057N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current I D T C=25 °C2) T C=100 °C 60 43 Pulsed drain current3) I D,pulse T C=25 °C 240 Avalanche energy, single pulse4) E AS...


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