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IXFH160N15T2

INCHANGE
Part Number IXFH160N15T2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 2, 2020
Detailed Description isc N-Channel MOSFET Transistor IXFH160N15T2 ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source O...
Datasheet PDF File IXFH160N15T2 PDF File

IXFH160N15T2
IXFH160N15T2

Overview
isc N-Channel MOSFET Transistor IXFH160N15T2 ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous 150 V ±20 V 160 A IDM Drain Current-Single Plused 440 A PD Total Dissipation @TC=25℃ 880 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
17 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXFH160N15T2 ·ELECTR...


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