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IXFH160N15T2

IXYS
Part Number IXFH160N15T2
Manufacturer IXYS
Description Power MOSFET
Published Nov 2, 2020
Detailed Description Preliminary Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast In...
Datasheet PDF File IXFH160N15T2 PDF File

IXFH160N15T2
IXFH160N15T2

Overview
Preliminary Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH160N15T2 VDSS = ID25 = ≤ RDS(on) trr ≤ 150V 160A 9.
0mΩ 160ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 150 V 150 V ± 20 V ± 30 V 160 A 440 A 80 A 1.
5 J 15 V/ns 880 W -55 .
.
.
+175 °C 175 °C -55 .
.
.
+175 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250µA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
150 V 2.
5 4.
5 V ± 200 nA 10 µA 1 mA 7.
7 9.
0 mΩ TO-247 G DS Tab G = Gate D = Drain S = Source Tab = Drain Features z International Standard Package z High Current Handling Capability z Fast Intrinsic Diode z Dynamaic dv/dt Rated z Avalanche Rated z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications © 2010 IXYS CORPORATION, All Rights Reserved DS100228A(04/10) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RG = 2Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.
5 • VDSS, ID = 0.
5 • ID25 RthJC RthCS Characteristic Values Min.
...


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