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IXTH102N15T

INCHANGE
Part Number IXTH102N15T
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 12, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characteriz...
Datasheet PDF File IXTH102N15T PDF File

IXTH102N15T
IXTH102N15T

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 102 A IDM Drain Current-Single Pulsed 300 A PD Total Dissipation @TC=25℃ 455 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTIC...


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