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IXTH102N15T

IXYS
Part Number IXTH102N15T
Manufacturer IXYS
Description Power MOSFET
Published Jun 11, 2015
Detailed Description Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T T...
Datasheet PDF File IXTH102N15T PDF File

IXTH102N15T
IXTH102N15T

Overview
Trench Gate Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTA102N15T IXTH102N15T IXTP102N15T IXTQ102N15T TO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP) VDSS = ID25 = RDS(on) ≤ 150V 102A 18mΩ TO-3P (IXTQ) G S (TAB) GD S (TAB) G DS (TAB) G D S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ Continuous Transient Maximum Ratings 150 V 150 V ± 20 V ± 30 V TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C 102 A 75 A 300 A 51 A 750 mJ IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C TC = 25°C 10 455 -55 .
.
.
+175 175 -55 .
.
.
+175 V/ns W °C °C °C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10 seconds 300 °C 260 °C Mounting Torque (TO-220, TO-3P, TO-247) 1.
13 / 10 Mounting Force (TO-263) 10.
.
65/2.
2.
.
14.
6 Nmlb.
in.
N/lb.
TO-263 TO-220 TO-3P TO-247 2.
5 g 3.
0 g 5.
5 g 6.
0 g Symbol Test C...


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