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IXTH300N04T2

INCHANGE
Part Number IXTH300N04T2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 13, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.5mΩ@VGS=10V ·Fully characteri...
Datasheet PDF File IXTH300N04T2 PDF File

IXTH300N04T2
IXTH300N04T2

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.
5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 300 A IDM Drain Current-Single Pulsed 900 A PD Total Dissipation @TC=25℃ 480 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth(j-c) Junction-to-case thermal resistance 0.
313 UNIT ℃/W IXTH300N04T2 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTH300N04T2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER COND...


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