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IXTH300N04T2

IXYS
Part Number IXTH300N04T2
Manufacturer IXYS
Description Power MOSFET
Published Nov 13, 2020
Detailed Description Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH300N04T2 VDS...
Datasheet PDF File IXTH300N04T2 PDF File

IXTH300N04T2
IXTH300N04T2

Overview
Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH300N04T2 VDSS = ID25 = RDS(on) ≤ 40V 300A 2.
5mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold M d Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds Mounting torque Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings 40 V 40 V ± 20 V 300 A 160 A 900 A 100 A 600 mJ 480 W -55 .
.
.
+175 °C 175 °C -55 .
.
.
+175 °C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
6 g Characteristic Values Min.
Typ.
Max.
40 V 2.
0 4.
0 V ±200 nA 5 μA 150 μA 2...


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