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IXTP1N100P

Part Number	IXTP1N100P
Manufacturer	INCHANGE
Description	TO-220C N-Channel MOSFET
Published	Nov 16, 2020
Detailed Description	isc N-Channel MOSFET Transistor IXTP1N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully ...
Datasheet	IXTP1N100P PDF File

Overview

isc N-Channel MOSFET Transistor IXTP1N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.
0 IDM Drain Current-Single Pulsed 1.
8 PD Total Dissipation @TC=25℃ 50 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARAC...

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