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IXTP1N100

IXYS Corporation
Part Number IXTP1N100
Manufacturer IXYS Corporation
Description High Voltage MOSFET
Published Apr 5, 2005
Detailed Description Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1...
Datasheet PDF File IXTP1N100 PDF File

IXTP1N100
IXTP1N100

Overview
Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.
5 A = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 1000 1000 ±20 ±30 1.
5 6 1.
5 V V V V A A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD D (TAB) S TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C 6 200 3 54 -55 .
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+150 150 -55 .
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+150 G S D (TAB) G = Gate, S = Source, D = Drain, TA...


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