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IXTP12N65X2

INCHANGE
Part Number IXTP12N65X2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 16, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: ...
Datasheet PDF File IXTP12N65X2 PDF File

IXTP12N65X2
IXTP12N65X2

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 180 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·...


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