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IXTP12N65X2M

Part Number	IXTP12N65X2M
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 16, 2020
Detailed Description	isc N-Channel MOSFET Transistor IXTP12N65X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS...
Datasheet	IXTP12N65X2M PDF File

Overview

isc N-Channel MOSFET Transistor IXTP12N65X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 180 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACT...

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