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IXTP05N100M

IXYS
Part Number IXTP05N100M
Manufacturer IXYS
Description N-Channel MOSFET
Published Nov 16, 2020
Detailed Description High Voltage MOSFET IXTP05N100M (Electrically Isolated Tab) VDSS = ID25 = RDS(on) ≤ 1000V 700mA 17Ω N-Channel Enhance...
Datasheet PDF File IXTP05N100M PDF File

IXTP05N100M
IXTP05N100M

Overview
High Voltage MOSFET IXTP05N100M (Electrically Isolated Tab) VDSS = ID25 = RDS(on) ≤ 1000V 700mA 17Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque Maximum Ratings 1000 V 1000 V ± 30 V ± 40 V 700 mA 3 A 1 A 100 mJ 3 V/ns 25 W - 55 .
.
.
+150 °C 150 °C - 55 .
.
.
+150 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
2.
5 g Symb...


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