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IXTP05N100

IXYS Corporation
Part Number IXTP05N100
Manufacturer IXYS Corporation
Description Power MOSFET
Published Dec 13, 2006
Detailed Description High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VD...
Datasheet PDF File IXTP05N100 PDF File

IXTP05N100
IXTP05N100

Overview
High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220) TO-220 TO-263 TO-263HV Maximum Ratings 1000 V 1000 V 30 V 40 V 750 mA 3 A 1 A 100 mJ 3 V/ns 40 W -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in 3.
0 g 2...


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