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IXTP86N20T

INCHANGE
Part Number IXTP86N20T
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 19, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTP86N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 29mΩ@VGS=10V ·Fully...
Datasheet PDF File IXTP86N20T PDF File

IXTP86N20T
IXTP86N20T

Overview
isc N-Channel MOSFET Transistor IXTP86N20T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 29mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 86 IDM Drain Current-Single Pulsed 260 PD Total Dissipation @TC=25℃ 300 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.
5 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-...


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