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IXTP86N20T

IXYS
Part Number IXTP86N20T
Manufacturer IXYS
Description Power MOSFET
Published Nov 19, 2020
Detailed Description Trench Gate Power MOSFET N-Channel Enhancement Mode Avalance Rated IXTA86N20T IXTP86N20T IXTQ86N20T Symbol VDSS VDGR V...
Datasheet PDF File IXTP86N20T PDF File

IXTP86N20T
IXTP86N20T

Overview
Trench Gate Power MOSFET N-Channel Enhancement Mode Avalance Rated IXTA86N20T IXTP86N20T IXTQ86N20T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 200 V 200 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 86 260 10 1 550 3 -55 .
.
.
+175 175 -55 .
.
.
+175 A A A J W V/ns C C C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Force (TO-263) 10.
.
65 / 2.
2.
.
14.
6 Mounting Torque (TO-220 & TO-3P) 1.
13 / 10 N/lb Nm/lb.
in TO-263 TO-220 TO-3P 2.
5 g 3.
0 g 5.
5 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 © 2018...


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