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IXTQ60N20L2

INCHANGE
Part Number IXTQ60N20L2
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 20, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance :...
Datasheet PDF File IXTQ60N20L2 PDF File

IXTQ60N20L2
IXTQ60N20L2

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Plused 150 A PD Total Dissipation @TC=25℃ 540 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.
23 ℃/W IXTQ60N20L2 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTQ60N20L2 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS M...


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