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IXTQ60N20T

IXYS
Part Number IXTQ60N20T
Manufacturer IXYS
Description Power MOSFET
Published Aug 9, 2013
Detailed Description TrenchTM Power MOSFET IXTA60N20T IXTP60N20T IXTQ60N20T VDSS ID25 RDS(on) = 200V = 60A ≤ 40mΩ TO-263 AA (IXTA) N-Ch...
Datasheet PDF File IXTQ60N20T PDF File

IXTQ60N20T
IXTQ60N20T

Overview
TrenchTM Power MOSFET IXTA60N20T IXTP60N20T IXTQ60N20T VDSS ID25 RDS(on) = 200V = 60A ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight 1.
6mm (0.
062in.
) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220 &TO-3P) TO-263 TO-220 TO-3P Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 200 200 ±20 ±30 60 150 30 700 500 -55 .
.
.
+175 175 -55 .
.
.
+175 300 260 1.
13 / 10 2.
5 3.
0 5.
5 V V V V A A A mJ W °C °C °C °C °C Nm/lb.
in.
g g g G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain G DS D (Tab) TO-3P (IXTQ) Features z z z z z High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwis...


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