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IXTQ200N085T

INCHANGE
Part Number IXTQ200N085T
Manufacturer INCHANGE
Description N-ChannelMOSFET
Published Nov 21, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : ...
Datasheet PDF File IXTQ200N085T PDF File

IXTQ200N085T
IXTQ200N085T

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 85 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 200 A IDM Drain Current-Single Plused 540 A PD Total Dissipation @TC=25℃ 480 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.
31 UNIT ℃/W IXTQ200N085T isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTQ200N085T ·ELECTRI...


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