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IXTQ200N085T

IXYS Corporation
Part Number IXTQ200N085T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalan...
Datasheet PDF File IXTQ200N085T PDF File

IXTQ200N085T
IXTQ200N085T

Overview
Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.
0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Maximum Ratings 85 85 ± 20 200 75 540 25 1.
0 V V V A A A A J 3 V/ns 480 W -55 .
.
.
+175 175 -55 .
.
.
+175 °C °C °C 300 °C 260 °C 1.
13 / 10 Nm/lb.
i...


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