DatasheetsPDF.com

IXTY2N60P

INCHANGE
Part Number IXTY2N60P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 23, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTY2N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.1Ω@VGS=10V ·100% a...
Datasheet PDF File IXTY2N60P PDF File

IXTY2N60P
IXTY2N60P

Overview
isc N-Channel MOSFET Transistor IXTY2N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.
1Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Pulsed 4 A PD Total Dissipation @TC=25℃ 55 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)