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AOTF11S60L

Alpha & Omega Semiconductors
Part Number AOTF11S60L
Manufacturer Alpha & Omega Semiconductors
Description Power Transistor
Published Nov 28, 2020
Detailed Description AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A α MOS TM Power Transistor General Description Product Summary The A...
Datasheet PDF File AOTF11S60L PDF File

AOTF11S60L
AOTF11S60L

Overview
AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 600V 11A α MOS TM Power Transistor General Description Product Summary The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 D Top View TO-220F(3kVAC;1s) TO-263 D2PAK D 700V 45A 0.
399Ω 11nC 2.
7µJ D AOT11S60L S D G AOTF11S60(L) S GD G S G AOB11S60L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT11S60L/AOB11S60L Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID 11 8 Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy C EAR Single pulsed avalanche energy G EAS TC=25°C Power Dissipation B Derate above 25oC PD 178 1.
4 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS AOT11S60L/AOB11S60L 65 0.
5 Maximum Junction-to-Case RθJC 0.
7 * Drain current limited by maximum junction temperature.
AOTF11S60 600 ±30 11* 8* 45 2 60 120 38 0.
3 100 20 -55 to 150 300 AOTF11S60 65 -3.
25 AOTF11S60L 11* 8* 29 0.
2 AOTF11S60L 65 -4.
3 S Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev 6.
0: Sepetember 2017 www.
aosmd.
com Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Ze...


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