DatasheetsPDF.com

AOTF11S65

Alpha & Omega Semiconductors
Part Number AOTF11S65
Manufacturer Alpha & Omega Semiconductors
Description Power Transistor
Published Jan 11, 2014
Detailed Description AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65...
Datasheet PDF File AOTF11S65 PDF File

AOTF11S65
AOTF11S65

Overview
AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.
399Ω 13.
2nC 2.
9µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11S65L & AOB11S65L & AOTF11S65L Top View TO-220 TO-220F TO-263 D2PAK D D G AOT11S65 D S G AOTF11S65 D G S G AOB11S65 S S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter AOT11S65/AOB11S65 Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C C AOTF11S65 650 ±30 11* 8* 45 2 60 120 AOTF11S65L Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT11S65/AOB11S65 65 0.
5 0.
63 198 1.
6 11 8 11* 8* A A mJ mJ 31 0.
25 W W/ oC V/ns ° C ° C AOTF11S65L 65 -4 Units ° C/W ° C/W ° C/W Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D 39 0.
31 100 20 -55 to 150 300 AOTF11S65 65 -3.
25 RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev1: Mar 2012 www.
aosmd.
com Page 1 of 7 Free Datasheet http://www.
datasheet4u.
com/ AOT11S65/AOB11S65/AOTF11S65 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) VSD IS ISM Drain-Sou...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)