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SPD15P10P

Infineon
Part Number SPD15P10P
Manufacturer Infineon
Description Small-Signal-Transistor
Published Dec 3, 2020
Detailed Description SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead ...
Datasheet PDF File SPD15P10P PDF File

SPD15P10P
SPD15P10P

Overview
SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD15P10P G -100 V 0.
24 Ω -15 A PG-TO252-3 Type SPP15P10P G SPD15P10P G Package PG-TO220-3 PG-TO252-3 Marking 15P10P 15P10P Lead free Packing Yes Non dry Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS I D=-15 A, R GS=25 Ω V GS P tot T C=25 °C T j, T stg ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 Value -15 -10.
6 -60 230 ±20 128 -55 .
.
.
175 1C (1kV to 2kV) 260 °C 55/175/56 Unit A mJ V W °C Rev 1.
8 page 1 2012-09-11 Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Symbol Conditions SPD15P10P G min.
Values typ.
Unit max.
R thJC - R thJA minimal footprint, steady state - 6 cm2 cooling area1), - steady state - 1.
17 K/W - 75 - 45 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Transconductance V (BR)DSS V GS=0 V, I D=-1 mA -100 - -V V GS(th) V DS=V GS, I D=1.
54 mA -4 -3 -2.
1 I DSS V DS=-100 V, V GS=0 V, T j=25 °C - -0.
1 -1 µA V DS=-100 V, V GS=0 V, T j=150 °C - I GSS V GS=-20 V, V DS=0 V - R DS(on) V GS=-10 V, I D=-10.
6 A - -10 -100 -10 -100 nA 160 240 mΩ g fs |V DS|>2|I D|R DS(on)max, I D=-10.
6 A 4.
7 9.
3 -S 1) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in stil...


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