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SPD15P10PLG

Infineon Technologies
Part Number SPD15P10PLG
Manufacturer Infineon Technologies
Description Power Transistor
Published Nov 11, 2015
Detailed Description SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • logic level • Avalanche rated • Pb-free lead plating;...
Datasheet PDF File SPD15P10PLG PDF File

SPD15P10PLG
SPD15P10PLG

Overview
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • logic level • Avalanche rated • Pb-free lead plating; RoHS compliant  Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD15P10PL G -100 V 0.
20 : -15 A PG-TO252-3 Type Package SPD15P10PL G PG-TO252-3 Marking 15P10PL Lead free Packing Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature I D T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS I D=-15 A, R GS=25 : V GS P tot T C=25 °C T j, T stg ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 Value -15 11.
3 -60 230 ±20 128 -55 .
.
.
175 1C (1kV to 2kV) 260 °C 55/175/56 Unit A mJ V W °C Rev 1.
5 page 1 2012-09-03 Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Symbol Conditions SPD15P10PL G min.
Values typ.
Unit max.
R thJC R thJA minimal footprint, steady state 6 cm2 cooling area1), steady state - - 1.
17 K/W - 75 - 45 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current V (BR)DSS V GS=0 V, I D=-250 mA V GS(th) V DS=V GS, I D=1.
54 mA -100 -1 -1.
5 -V -2 I DSS V DS=-100 V, V GS=0 V, T j=25 °C - -0.
1 -1 μA I GSS V DS=-100 V, V GS=0 V, T j=150 °C V GS=-20 V, V DS=0 V - -10 -100 -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.
5 V, I D=-9.
7 A - 190 270 m: Transconductance V GS=-10 V, I D=-11.
3 A - 140 200 m: g fs |V DS|>2|I D|R DS(on)max, I D=-11.
3 A 5.
5 11.
0 -S 1) Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 μm thick) copper area for drain connection.
PCB is vertical in still air.
Rev 1.
5 page 2 2012-09-03 Para...


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