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STB14NM50N

ST Microelectronics
Part Number STB14NM50N
Manufacturer ST Microelectronics
Description N-Channel MOSFET
Published Dec 17, 2009
Detailed Description STB14NM50N N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in a D²PAK package Datasheet - production data T...
Datasheet PDF File STB14NM50N PDF File

STB14NM50N
STB14NM50N

Overview
STB14NM50N N-channel 500 V, 0.
28 Ω typ.
, 12 A MDmesh™ II Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2PAK Features Order code VDS @ TJmax RDS(on) max ID STB14NM50N 550 V 0.
32 Ω 12 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1.
Internal schematic diagram ' Ć7$% *  Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
6  $0Y Order code STB14NM50N Table 1.
Device summary Marking Package 14NM50N D²PAK Packaging Tape and reel June 2014 This is information on a product in full production.
DocID024666 Rev 1 1/15 www.
st.
com Contents Contents STB14N...


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