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HMC-ALH313

Analog Devices
Part Number HMC-ALH313
Manufacturer Analog Devices
Description GaAs HEMT MMIC LOW-NOISE AMPLIFIER
Published Dec 6, 2020
Detailed Description LOW NOISE AMPLIFIERS - CHIP v02.0209 1 Typical Applications This HMC-ALH313 is ideal for: • Point-to-Point Radios • Poi...
Datasheet PDF File HMC-ALH313 PDF File

HMC-ALH313
HMC-ALH313

Overview
LOW NOISE AMPLIFIERS - CHIP v02.
0209 1 Typical Applications This HMC-ALH313 is ideal for: • Point-to-Point Radios • Point-to-Multi-Point Radios • VSAT • Test Equipment & Sensors • Military & Space Functional Diagram HMC-ALH313 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz Features Noise Figure: 3 dB Gain: 20 dB P1dB Output Power: +12 dBm Supply Voltage: +2.
5V @ 52 mA Die Size: 1.
80 x 0.
73 x 0.
1 mm General Description The HMC-ALH313 is a three stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 27 and 33 GHz.
The amplifier provides 20 dB of gain, a 3 dB noise figure and +12 dBm of output power at 1 dB gain compression while requiring only 52 mA from a +2.
5V supply voltage.
This amplifier die is ideal for use as a LNA or driver amplifier, and may be easily integrated into Multi-Chip-Modules (MCMs) due to its small size (1.
30 mm2) .
Electrical Specifications ,[1] TA = +25° C, Vdd= 2.
5V, Idd = 52mA [2] Parameter Min.
Typ.
Frequency Range 27 - 33 Gain 18 20 Gain Variation over Temperature 0.
03 Noise Figure 3 Input Return Loss 12 Output Return Loss 14 Output Power for 1 dB Compression 10 12 Supply Current 52 [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.
3V (Typ.
-0.
3V) to achieve Iddtotal = 52 mA Max.
3.
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