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HMC-ALH382

Analog Devices
Part Number HMC-ALH382
Manufacturer Analog Devices
Description GaAs HEMT LOW-NOISE AMPLIFIER
Published Dec 6, 2020
Detailed Description Amplifiers - low noise - Chip v03.1210 1 Typical Applications This HMC-ALH382 is ideal for: • Short Haul / High Capacit...
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HMC-ALH382
HMC-ALH382

Overview
Amplifiers - low noise - Chip v03.
1210 1 Typical Applications This HMC-ALH382 is ideal for: • Short Haul / High Capacity Links • Wireless LANs • Military & Space Functional Diagram HMC-ALH382 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Features Noise Figure: 3.
8 dB P1dB: +12 dBm Gain: 21 dB Supply Voltage: +2.
5V 50 Ohm Matched Input/Output Die Size: 1.
55 x 0.
73 x 0.
1 mm General Description The HMC-ALH382 is a high dynamic range, four stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 57 and 65 GHz.
The HMC-ALH382 features 21 dB of small signal gain, 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.
5V supply voltage.
All bond pads and the die backside are Ti/ Au metallized and the amplifier device is fully passivated for reliable operation.
This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifications, TA = +25° C, Vdd = 2.
5V, Idd = 64 mA* Parameter Min.
Typ.
Frequency Range 57 - 65 Gain 19 21 Noise Figure 4 Input Return Loss 12 Output Return Loss 10 Output Power for 1 dB Compression (P1dB) 12 Supply Current (Idd)(Vdd= 2.
5V,Vgg= -0.
3V Typ.
) 64 *Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.
3V (Typ.
-0.
2V) to achieve Iddtotal = 64 mA Max.
5.
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