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HMC-ALH508

Analog Devices
Part Number HMC-ALH508
Manufacturer Analog Devices
Description GaAs HEMT LOW-NOISE AMPLIFIER
Published Dec 6, 2020
Detailed Description v02.0209 1 Typical Applications This HMC-ALH508 is ideal for: • Short Haul / High Capacity Links • Wireless LANs • Autom...
Datasheet PDF File HMC-ALH508 PDF File

HMC-ALH508
HMC-ALH508

Overview
v02.
0209 1 Typical Applications This HMC-ALH508 is ideal for: • Short Haul / High Capacity Links • Wireless LANs • Automotive Radar • Military & Space • E-Band Communication Systems HMC-ALH508 GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz Features Noise Figure: <5 dB P1dB: +7 dBm Gain: 13 dB Supply Voltage: +2.
4V 50 Ohm Matched Input/Output Die Size: 3.
2 x 1.
6 x 0.
1 mm Amplifiers - low noise - Chip Functional Diagram General Description The HMC-ALH508 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz.
The HMC-ALH508 features 13 dB of small signal gain, 4.
5 dB of noise figure and an output power of +7 dBm at 1dB compression from two supply voltages at 2.
1V and 2.
4V respectively.
All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifications [1], TA = +25° C Vdd1=Vdd2 = 2.
1V, Vdd3=2.
4V, Idd1+Idd2+Idd3 = 30 mA [2] Parameter Min.
Frequency Range Gain 11 Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Total Supply Current (Idd1+Idd2+Idd3) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1=Vgg2 between -1V to +0.
3V (typ -0.
5V )to achieve Iddtotal = 30 mA Typ.
71 - 86 13 4.
5 8 10 7 30 Max.
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