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HMC-ALH509

Analog Devices
Part Number HMC-ALH509
Manufacturer Analog Devices
Description GaAs HEMT LOW-NOISE AMPLIFIER
Published Dec 6, 2020
Detailed Description Amplifiers - CHIP v05.0713 Typical Applications This HMC-ALH509 is ideal for: • Short Haul / High Capacity Links • Auto...
Datasheet PDF File HMC-ALH509 PDF File

HMC-ALH509
HMC-ALH509

Overview
Amplifiers - CHIP v05.
0713 Typical Applications This HMC-ALH509 is ideal for: • Short Haul / High Capacity Links • Automotive Radar • E-Band Communication Systems • Test & Measurement HMC-ALH509 GaAs HEMT LOW NOISE AMPLIFIER 71 - 86 GHz Features Noise Figure: 5 dB P1dB: +7 dBm Gain: 14 dB Supply Voltage: +2V 50 Ohm Matched Input/Output Die Size: 3.
20 x 1.
60 x 0.
1 mm Functional Diagram General Description The HMC-ALH509 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 71 and 86 GHz.
The HMC-ALH509 features 14 dB of small signal gain, 5 dB of noise figure and an output power of +7 dBm at 1dB compression from a +2V supply voltage.
All bond pads and the die backside are Ti/Au metallized.
This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifications, TA = +25° C, Vdd = 2V* Parameter Min.
Frequency Range Gain 12 Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Supply Current (Idd)(Vdd=2V, Vgg= -0.
2V Typ.
) *Unless otherwise indicated, all measurements are from probed die Typ.
71 - 86 14 5 14 10 7 50 Max.
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