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W26NM50

STMicroelectronics
Part Number W26NM50
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description STW26NM50 N-channel 500 V, 0.10 Ω, 30 A TO-247 MDmesh™ Power MOSFET Features Type STW26NM50 VDSS 500 V RDS(on) max <...
Datasheet PDF File W26NM50 PDF File

W26NM50
W26NM50

Overview
STW26NM50 N-channel 500 V, 0.
10 Ω, 30 A TO-247 MDmesh™ Power MOSFET Features Type STW26NM50 VDSS 500 V RDS(on) max < 0.
12 Ω ID 30 A ■ High dv/dt and avalanche capabilities ■ Improved ESD capability ■ Low input capacitance and gate charge Application ■ Switching applications Description MDmesh™ technology applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics.
3 2 1 TO-247 Figure 1.
Internal schematic diagram $ ' Table 1.
Device summary Order codes STW26NM50 Marking W26NM50 3 !-V Package TO-247 Packaging Tube October 2009 Doc ID 8291 Rev 11 1/12 www.
st.
com 12 Contents Contents STW26NM50 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package mechanical data .
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9 5 Revision history .
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11 2/12 Doc ID 8291 Rev 11 STW26NM50 1 Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter VDS VGS ID ID IDM (1) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor VESD(G-S) dv/dt (2) Gate source ESD (HBM-C=100 pF, R=1.
5 kΩ) Peak diode recovery voltage slope Tstg Storage temperature Tj Max.
operating junction temperature 1.
Pulse width limited by safe opera...


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