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W26NM60

STMicroelectronics
Part Number W26NM60
Manufacturer STMicroelectronics
Description STW26NM60
Published Mar 4, 2015
Detailed Description STW26NM60 STU26NM60, STU26NM60I N-CHANNEL 600V - 0.125Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh™ Power MOSFET...
Datasheet PDF File W26NM60 PDF File

W26NM60
W26NM60

Overview
STW26NM60 STU26NM60, STU26NM60I N-CHANNEL 600V - 0.
125Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh™ Power MOSFET TYPE VDSS RDS(on) ID STW26NM60 STU26NM60 STU26NM60I 600 V 600 V 600 V < 0.
135 Ω < 0.
135 Ω < 0.
135 Ω 30 A 26 A 26 A n TYPICAL RDS(on) = 0.
125Ω n HIGH dv/dt AND AVALANCHE CAPABILITIES n IMPROVED ESD CAPABILITY n LOW INPUT CAPACITANCE AND GATE CHARGE n LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
TO-247 123 Max220 Max220I INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
ORDERING INFORMATION SALES TYPE MARKING STW26NM60 W26NM60 STU26NM60 U26NM60 STU26NM60I U26NM60I PACKAGE TO-247 Max220 Max220I PACKAGING TUBE TUBE TUBE February 2002 1/11 STW26NM60, STU26NM60, STU26NM60I ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (l ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.
5KΩ) dv/dt (1) Peak Diode Recovery voltage slope Tj Operating Junction Temperature Tstg Storage Temperature (l ) Pulse width limi ted by safe operating area (1) ISD ≤26A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed STW 26NM60 30 18.
9 120 313 2.
5 Value STU26NM60 600 600 ± 30 26 16.
38 104 ...


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