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N2NE10L

STMicroelectronics
Part Number N2NE10L
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) I...
Datasheet PDF File N2NE10L PDF File

N2NE10L
N2NE10L

Overview
STN2NE10L N-channel 100V - 0.
33Ω -2A - SOT-223 STripFET™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID 2 STN2NE10L 100V <0.
4Ω 1.
8A 3 ■ Exceptional dv/dt capability 2 1 ■ Avalanche rugged technology SOT-223 ■ 100% avalanche tested ) ■ Low threshold drive ct(s Description du This Power MOSFET is the latest development of ro STMicroelectronics unique "Single Feature P Size™" strip-based process.
The resulting transistor shows extremely high packing density te for low on-resistance, rugged avalanche le characteristics and less critical alignment steps o therefore a remarkable manufacturing bs reproducibility.
Internal schematic diagram ct(s) - O Applications du ■ Switching application Obsolete Pro Order codes Part number STN2NE10L Marking N2NE10L Package SOT-223 Packaging Tape & reel February 2007 Rev 5 1/12 www.
st.
com 12 Contents Contents STN2NE10L 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuit .
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8 4 Package mechanical data .
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9 5 Revision history .
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11 Obsolete Product(s) - Obsolete Product(s) 2/12 STN2NE10L 1 Electrical ratings Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 1.
8 A ID IDM(1) Drain current (continuous) at TC=100°C Drain current (pulsed) 1.
3 A 7.
2 A PTOT Total dissipation at TC = 25°C 2.
5 W Derating f...


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