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N2NE10

ST Microelectronics
Part Number N2NE10
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Jul 9, 2009
Detailed Description ® STN2NE10 N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET™ POWER MOSFET TYPE STN2NE10 VDSS 100 V RDS(on) < 0.4 Ω ...
Datasheet PDF File N2NE10 PDF File

N2NE10
N2NE10

Overview
® STN2NE10 N - CHANNEL 100V - 0.
33 Ω - 2A - SOT-223 STripFET™ POWER MOSFET TYPE STN2NE10 VDSS 100 V RDS(on) < 0.
4 Ω ID 2A PRELIMINARY DATA s TYPICAL RDS(on) = 0.
33 Ω s EXCEPTIONAL dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100 % AVALANCHE TESTED 2 s APPLICATION ORIENTED CHARACTERIZATION )DESCRIPTION t(sThis Power Mosfet is the latest development of cSTMicroelectronics unique "Single Feature uSize™ " stip-based process.
The resulting transidstor shows extremely high packing density for low roon-resistance, rugged avalanche characteristics Pand less critical alignment steps therefore a retemarkable manufacturing reproducibility.
leAPPLICATIONS sos DC MOTOR CONTROL (DISK DRIVES,etc.
) bs DC-DC & DC-AC CONVERTERS Os SYNCHRONOUS RECTIFICATION 3 2 1 SOT-223 INTERNAL SCHEMATIC DIAGRAM roduct(s) -ABSOLUTE MAXIMUM RATINGS PSymbol Parameter teVDS Drain-source Voltage (VGS = 0) leVDGR oVGS bsID O ID Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (contin...


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