DatasheetsPDF.com

TK20J60W

Toshiba
Part Number TK20J60W
Manufacturer Toshiba
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK20J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File TK20J60W PDF File

TK20J60W
TK20J60W

Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK20J60W 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
13 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.
7 to 3.
7 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK20J60W 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg TOR 600 ±30 20 80 165 200 5 20 80 150 -55 to 150 0.
8 V A W mJ A  Nm Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 2012-12 1 2013-12-26 Rev.
3.
0 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 14 mH, RG = 25 Ω, IAR = 5 A TK20J60W Symbol Rth(ch-c) Rth(ch-a) Max 0.
757 50 Unit /W Note: This transistor is sensitive to electrostatic discha...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)