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TK20J60U

Toshiba Semiconductor
Part Number TK20J60U
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 21, 2010
Detailed Description TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Application...
Datasheet PDF File TK20J60U PDF File

TK20J60U
TK20J60U

Overview
TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.
165 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 V ±30 V 20 A 40 190 W 144 mJ 15 A 19 mJ 150 °C −55 to 150 °C 15.
9 MAX.
Unit: mm Ф3.
2 ± 0.
2 4.
5 1.
0 2.
0 20.
0 ± 0.
3 9.
0 2.
0 3.
3 MAX.
20.
5 ± 0.
5 2.
0 ± 0.
3 1.
0 ＋0.
3 －0.
25 5.
45 ± 0.
2 5.
45 ± 0.
2 2.
8 4.
8 MAX.
1.
8 MAX.
＋0.
3 0.
6 －0.
1 123 1.
Gate 2.
Drain (heatsink) 3.
Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case Rth (ch-c) 0.
658 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C.
1 Note 2: VDD = 90 V, Tc...


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