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IRFI530N

International Rectifier
Part Number IRFI530N
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1353A PRELIMINARY IRFI530N D HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High ...
Datasheet PDF File IRFI530N PDF File

IRFI530N
IRFI530N

Overview
PD - 9.
1353A PRELIMINARY IRFI530N D HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.
5KVRMS … Sink to Lead Creepage Dist.
= 4.
8mm Fully Avalanche Rated VDSS = 100V G S RDS(on) = 0.
11Ω ID = 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for addition...


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