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AUIRGP35B60PD-E

Infineon
Part Number AUIRGP35B60PD-E
Manufacturer Infineon
Description IGBT
Published Dec 16, 2020
Detailed Description AUTOMOTIVE GRADE AUIRGP35B60PD-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features  NPT Technology, Posi...
Datasheet PDF File AUIRGP35B60PD-E PDF File

AUIRGP35B60PD-E
AUIRGP35B60PD-E


Overview
AUTOMOTIVE GRADE AUIRGP35B60PD-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features  NPT Technology, Positive Temperature Coefficient  Lower VCE(SAT)  Lower Parasitic Capacitances  Minimal Tail Current  HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode  Tighter Distribution of Parameters  Higher Reliability  Lead-Free, RoHS Compliant  Automotive Qualified * C G E n-channel VCES = 600V VCE(on) typ.
= 1.
85V @ VGE = 15V IC = 22A Equivalent MOSFET Parameters RCE(on) typ.
= 84m ID (FET equivalent) = 35A C Applications  PFC and ZVS SMPS Circuits  DC/DC Converter Charger Benefits  Parallel Operation for Higher Current Applications  Lower Conduction Losses and Switching Losses  Higher Switching Frequency up to 150kHz G Gate GC E TO-247AD AUIRGP35B60PD-E C Collector E Emitter Base Part Number AUIRGP35B60PD-E Package Type TO-247AD Standard Pack Form Quantity Tube 25 Orderable Part Number AUIRGP35B60PD-E Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max.
Units VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current ICM Pulse Collector Current (Ref.
Fig.
C.
T.
4) ILM Clamped Inductive Load Current IF @ TC = 25°C Diode Continuous Forward Current IF @ TC = 100°C Diode Continuous Forward Current IFSM Maximum Repetitive Forward Current VGE Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissi...


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